0.3µm-N-HIGFET capabilities for microwave power apllications

Touirat, M. ; Roger, M. ; Nuyen, L.T. ; Crosnier, Y. ; Salmer, G. (2000) 0.3µm-N-HIGFET capabilities for microwave power apllications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

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Abstract

0.3µm HIGFET transistors have been realized for microwave power applications. Power measurements at 3.5GHz using load-pull testbench have been carried out. Transistors exhibit an output saturated power of 16dBm and a power density of 370mW/mm for a 3V drain-to-source voltage.

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Documento relativo ad un convegno o altro evento (Poster)

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