Results are presented for the first fully physical, time-dependent, coupled electro-thermal simulations of microwave power FETs and MMICs, on timescales suitable for CAD. This is achieved by combining an original, analytical thermal resis-tance matrix model of time-dependent heat flow in a power FET or MMIC, with a fully physical electrical CAD model for transistors.

David, S. ; Batty, W. ; Panks, A.J. ; Johnson, R.G. ; Snowden, C.M. (2000) Results are presented for the first fully physical, time-dependent, coupled electro-thermal simulations of microwave power FETs and MMICs, on timescales suitable for CAD. This is achieved by combining an original, analytical thermal resis-tance matrix model of time-dependent heat flow in a power FET or MMIC, with a fully physical electrical CAD model for transistors. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

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Abstract

This paper presents original results provided by combination of Enhancement-Mode (E-mode) with metamorphic growth of Al0.67In0.33As/Ga0.66In0.34As HEMT structure on a GaAs substrate. The devices, which are the first reported for Enhancement-Mode Al0.67In0.33As/Ga0.66In0.34As MM-HEMT’s, exhibits good dc and rf performance. Good Schottky characteristics have been obtained (a forward turn-on voltage of 0.9V and a typical reverse gate to drain breakdown voltage of 16 V). The 0.4µm gate length devices have a saturation current of 455 mA/mm at +0.8V gate voltage. Gate current studies, versus gate-to-drain extension have been observed, in the first time, in such as devices, showing gate current issued from impact ionization.

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