Design of X-Band MEMS Microstrip Shunt Switches

Rizk, Jad B. ; Muldavin, Jeremy B. ; Tan, Guan-Leng ; Rebeiz, Gabriel M. (2000) Design of X-Band MEMS Microstrip Shunt Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

This paper presents the design and performance o X-band MEMS switches built in microstrip technology.The switches result in an insertion loss of less than 0.1 dB and a small isolation bandwidth,less than 10%,and are limited by the radial stubs band- widths.The isolation value is also not dependent on the down-state capacitance of the switch.The isolation bandwidth (less than -20 dB isolation)is improved to 8-13 GHz with the use o a π -network and two MEMS switches.The up-state insertion loss of the π switch is less than 0.25 dB.The paper demonstrates that the performance o microstrip switch circuits without via-holes is dominated by the shorting (radial)stubs,and careful design must be done to result in an acceptable bandwidth of operation.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Rizk, Jad B.
Muldavin, Jeremy B.
Tan, Guan-Leng
Rebeiz, Gabriel M.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:43
URI

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