Design of X-Band MEMS Microstrip Shunt Switches

Rizk, Jad B. and Muldavin, Jeremy B. and Tan, Guan-Leng and Rebeiz, Gabriel M. (2000) Design of X-Band MEMS Microstrip Shunt Switches. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

This paper presents the design and performance o X-band MEMS switches built in microstrip technology.The switches result in an insertion loss of less than 0.1 dB and a small isolation bandwidth,less than 10%,and are limited by the radial stubs band- widths.The isolation value is also not dependent on the down-state capacitance of the switch.The isolation bandwidth (less than -20 dB isolation)is improved to 8-13 GHz with the use o a π -network and two MEMS switches.The up-state insertion loss of the π switch is less than 0.25 dB.The paper demonstrates that the performance o microstrip switch circuits without via-holes is dominated by the shorting (radial)stubs,and careful design must be done to result in an acceptable bandwidth of operation.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Rizk, Jad B.
Muldavin, Jeremy B.
Tan, Guan-Leng
Rebeiz, Gabriel M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:43
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