A Gate Bias Free P wer MMIC Module for Ka-Band High-speed Wireless Applications

Ichikawa, S. ; Satoh, T. ; Shimura, T. ; Betti-Berutto, A. ; Furukawa, Y. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J. (2000) A Gate Bias Free P wer MMIC Module for Ka-Band High-speed Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

A high power and high gain packaged power MMIC module f r Ka-band applicati ns perating under a single polarity bias supply has been developed for the first time.This PA module consists f tw pseudomorphic HEMT MMICs,with Lg=0.25um,packaged in a single power module. These MMICs operate without a gate bias control v ltage when the gate bias is shunted in the package. This PA module pr vides 30dBm utput p wer and approximately 30dB of gain in the 27-31GHz range. The single bias supply perati n pr vides significant cost advantage to the device manufacture as well as the end user since there is no need to design a gate contr l bias network.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Ichikawa, S.
Satoh, T.
Shimura, T.
Betti-Berutto, A.
Furukawa, Y.
Hasegawa, Y.
Kuroda, S.
Fukaya, J.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:44
URI

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