A Gate Bias Free P wer MMIC Module for Ka-Band High-speed Wireless Applications

Ichikawa, S. and Satoh, T. and Shimura, T. and Betti-Berutto, A. and Furukawa, Y. and Hasegawa, Y. and Kuroda, S. and Fukaya, J. (2000) A Gate Bias Free P wer MMIC Module for Ka-Band High-speed Wireless Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text available as:
[img]
Preview
PDF
Download (221kB) | Preview

Abstract

A high power and high gain packaged power MMIC module f r Ka-band applicati ns perating under a single polarity bias supply has been developed for the first time.This PA module consists f tw pseudomorphic HEMT MMICs,with Lg=0.25um,packaged in a single power module. These MMICs operate without a gate bias control v ltage when the gate bias is shunted in the package. This PA module pr vides 30dBm utput p wer and approximately 30dB of gain in the 27-31GHz range. The single bias supply perati n pr vides significant cost advantage to the device manufacture as well as the end user since there is no need to design a gate contr l bias network.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Ichikawa, S.
Satoh, T.
Shimura, T.
Betti-Berutto, A.
Furukawa, Y.
Hasegawa, Y.
Kuroda, S.
Fukaya, J.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:44
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^