X BAND MMIC direct 8 Phase Shift Keying modulator for high data rate earth observation applications

Boulanger, C. ; Lapierre, L. ; Gizard, F. ; Zanchi, C. ; Lesthievent, G. (2000) X BAND MMIC direct 8 Phase Shift Keying modulator for high data rate earth observation applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

We present a new topology of 8 Phase Shift Keying modulator that allows achieving a very high accuracy of 0.4dB and 3° on the 8-8.4 GHz band in the –10°C to +55°C temperature range, with only one tuning voltage and a very low consumption. The device has been manufactured on the D02AH OMMIC GaAs PHEMT process but has been transposed to other FET foundries. This new topology is covered by a patent [1].It has been transfered and improved by Alcatel Space Industries, to fit industrial quality requirements, in order to define a commercial product of high data rate transmission channel for micro-satellites.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Boulanger, C.
Lapierre, L.
Gizard, F.
Zanchi, C.
Lesthievent, G.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:45
URI

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