X BAND MMIC direct 8 Phase Shift Keying modulator for high data rate earth observation applications

Boulanger, C. ; Lapierre, L. ; Gizard, F. ; Zanchi, C. ; Lesthievent, G. (2000) X BAND MMIC direct 8 Phase Shift Keying modulator for high data rate earth observation applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

We present a new topology of 8 Phase Shift Keying modulator that allows achieving a very high accuracy of 0.4dB and 3° on the 8-8.4 GHz band in the –10°C to +55°C temperature range, with only one tuning voltage and a very low consumption. The device has been manufactured on the D02AH OMMIC GaAs PHEMT process but has been transposed to other FET foundries. This new topology is covered by a patent [1].It has been transfered and improved by Alcatel Space Industries, to fit industrial quality requirements, in order to define a commercial product of high data rate transmission channel for micro-satellites.

Abstract
Document type
Conference or Workshop Item (Poster)
Creators
CreatorsAffiliationORCID
Boulanger, C.
Lapierre, L.
Gizard, F.
Zanchi, C.
Lesthievent, G.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:45
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