Original topology of GaAs-PHEMT mixer

Dubuc, D. ; Parra, T. ; Graffeuil, J. (2000) Original topology of GaAs-PHEMT mixer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

An original topology of GaAs-PHEMT mixer is investigated under high conversion gain consideration.Mixer topology is based on "LO source-injection"concept,since RF, IF and LO signals are respectively applied on the gate,drain and source terminals of the mixing transistor.The conversion matrix formalism allows both the optimization of matching and filtering cells and the assessment of the nonlinear stability.For 14 to 12 GHz frequency conversion, the designed MMIC single balanced mixer exhibits a conversion gain of 5 dB at -15 dBm LO power for a total power consumption of 88 mW and chip size about 0.9 mm 2. The other performances are an output IP3 of 7 dBm for –8 dBm LO Power and a NF of 7 dB.

Abstract
Document type
Conference or Workshop Item (Poster)
Creators
CreatorsAffiliationORCID
Dubuc, D.
Parra, T.
Graffeuil, J.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:45
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