New cold FET I-Q linear vector modulator topology

Boulanger, C. and Lapierre, Luc and Gizard, Francis (2000) New cold FET I-Q linear vector modulator topology. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

This paper presents the design, manufacture and test of a new cold FET monolithic I-Q vector modulator. The circuit has been developed in 8–8.4 GHz X band but can be transposed at any frequency range. The innovation is that the IF data signals are applied to the FET gates. The use of cold FETs allows achieving a 0.8 dB and 6° accuracy with only one voltage tuning on the whole bandwidth and the –25°C to +50°C temperature range. There is no DC consumption for the microwave modulator. The accuracy achieved at this first run is yet compatible with new coding and modulating systems and we have investigated several ways to improve the design.

Abstract
Document type
Conference or Workshop Item (Poster)
Creators
CreatorsAffiliationORCID
Boulanger, C.
Lapierre, Luc
Gizard, Francis
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:45
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