Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity

Forestier, S. ; Gasseling, T. ; Bouysse, P. ; Barataud, D. ; Quere, R. ; Nebus, J.M. (2003) Theoretical and Experimental Investigations on Nonlinear Capacitance and Loading Effects on Power PHEMT's Linearity. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

This paper presents a theoretical and experimental analysis of the phase conversion phenomena in a power PHEMT transistor. Relationships between the linearity of the device and the intrinsic gate-source capacitance CGS, gate-drain capacitance CGD ,transconductance GM as well as the load impedance ZL ,are explained. A judicious choice of the transistor’s operating conditions allows to reduce thephaseconversion AM/PM. In the case of PHEMT devices, the behaviors of CGS,CGD,GM elements and ZL value induce internal compensation phenomena between the intrinsic non-linearities.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Forestier, S.
Gasseling, T.
Bouysse, P.
Barataud, D.
Quere, R.
Nebus, J.M.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:51
URI

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