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Polleux, J.L. ; Moutier, F. ; Billabert, A.L. ; Rumelhard, C. ; Sönmez, E. ; Schumacher, H.
(2003)
An SiGe/Si Heterojunction Phototransistor for Opto-Microwave
Applications:Modeling and first Experimental Results.
In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract
A first SiGe bipolar heterojunction phototransistor developed in a commercial available SiGe/Si technology is presented.Emphasis on the development of a complete numerical model for the simulation of strained- SiGe based devices is given.The SiGe HPT exhibits a dc opto-microwave power gain of 3.46dB,i.e.a responsivity with 50Ohms loads of 1.49A/W,and a –3dB bandwidth of 0.4GHz at 940nm.Power budgets are drawn with the use of the opto-microwave power gain ’s monogram chart.
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