InP based double heterojunction bipolar transistorwith carbon doped GaAsSb:C base grown by LP-MOVPE

Neumann, S. ; Prost, W. ; Tegude, F.-J. (2003) InP based double heterojunction bipolar transistorwith carbon doped GaAsSb:C base grown by LP-MOVPE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carrier gas.Carbon doped GaAsSb lattice matched on InP are of pronounced interest for high speed double heterostructure bipolar transistors (DHBTs).We observed a significant effect of the nitrogen carrier gas on the growth behaviour which results in lower distribution coefficients.A linear doping behaviour with small CBr4 flows up to p=4 x 10 19 cm-3 can be observed and first realized DHBT structures shown fT and fmax values of 100 GHz and 60GHz, respectively.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Neumann, S.
Prost, W.
Tegude, F.-J.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:52
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