Pt/GaAs side wall Schottky diode

Machác, Petr ; Žilka, Martin ; Výborný, ZdeneČk (2003) Pt/GaAs side wall Schottky diode. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

This contribution deals with the technological realization of a special GaAs Schottky diode,based on the side-by-side technique.This is a structure,where one of the dimensions of the Schottky contact is given by the thickness of the epitaxial layer on which the structure is fabricated.We reached the value of cut-off frequency 21 GHz;this is in discrepancy with the theoretically predicted parameters.The contribution describes the technological improvements,which should lead to increase limiting frequency through the changing the structure morphology.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Machác, Petr
Žilka, Martin
Výborný, ZdeneČk
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:54
URI

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