A proposal of a bi-directional amplifier based on tunneling diodes for RF tagging system

Cidronali, A. ; Collodi, G. ; Deshpande, M. ; El-Zein, N. ; Manes, G. ; Nair, V. (2001) A proposal of a bi-directional amplifier based on tunneling diodes for RF tagging system. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

A bi-directional amplifier (BDA) utilizing the negative resistance of Heterojunction Interband Tunnel Diode (HITD) is proposed. Expected features of the BDA are: 1) symmetry and reciprocity of the associated scattering matrix; 2) gain at extremely low DC power consumption. These features make the circuits an enabling electronic function for RF identification tag. The BDA topology consisted of a pair of HITDs biased in the negative dynamic region (NDR) and a lumped element directional coupler with arbitrary impedance terminations. The design techniques along with an experimental validation are provided.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Cidronali, A.
Collodi, G.
Deshpande, M.
El-Zein, N.
Manes, G.
Nair, V.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:34
URI

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