Coplanar W-Band Low Noise Amplifier NMIC Using 100-nm Gate-length GaAs PHEMTs

Bessemoulin, A. ; Grunenputt, J. ; Fellon, P. ; Tessmann, A. ; Kohn, E. (2005) Coplanar W-Band Low Noise Amplifier NMIC Using 100-nm Gate-length GaAs PHEMTs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre 2004, Amsterdam, Amsterdam.
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Abstract

This paper presents the performance of a W-band low noise amplifier MMIC, based on coplanar technology, and utilizing 100-nm gate-length GaAs pseudomorphic power HEMTs. With a chip size of less than 2 mm2, this two-stage LNA achieves a small signal gain of more than 12 dB between 90 and 100 GHz, with 12.5-dB gain and 3.9-dB noise figure at 94 GHz. This is the best reported performance for power PHEMT-based LNAs at W-band, which is also comparable to the best results reported with more advanced InP or Metamorphic HEMT low noise technologies.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bessemoulin, A.
Grunenputt, J.
Fellon, P.
Tessmann, A.
Kohn, E.
Subjects
DOI
Deposit date
21 Oct 2005
Last modified
16 May 2011 11:38
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