Abstract

The harmonic and intermodulation distortions of SOI MOSFETs are studied with the help of the Wiener-Volterra series. Simple relationships are given and validated through Large-Signal Network Analyser measurements. The simplicity of the formulation makes it attractive to circuit designers. Furthermore, it may be used to determine the validity range of low-frequency based distortion characterization techniques. It is shown that the dominant poles of the HD for a 0.25 µm Partially Depleted SOI MOSFET lies at a few GHz, depending on the load impedance and the biasing and that its IMD3 depends on the tone separation.