Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements

Charbonniaud, C. ; Gasseling, T. ; De Meyer, S. ; Quéré, R. ; Teyssier, J.P. ; Barataud, D. ; Nébus, J.M ; Martin, T. ; Grimbert, B. ; Hoel, V. ; Caillas, N. ; Morvan, E. (2004) Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

A systematic evaluation of power performances of AlGaN/GaN HEMTs has been performed by means of CW on wafer Load Pull measurements at X band. Those measurements have been correlated to the results obtained through I-V and S-parameters pulsed measurements and a strong correlation has been found between the two types of measurement. Power up to 6Watts has been measured on a 1.2 mm device that can be further improved if trapping effects can be removed. A non linear electrical model of the 0.25x 1200 µm² transistor taken from the I-V and the S-parameters pulsed measurements is validated by CW load pull measures.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Charbonniaud, C.
Gasseling, T.
De Meyer, S.
Quéré, R.
Teyssier, J.P.
Barataud, D.
Nébus, J.M
Martin, T.
Grimbert, B.
Hoel, V.
Caillas, N.
Morvan, E.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Giu 2005
Ultima modifica
17 Feb 2016 14:10
URI

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