A Millimeter-Wave Linear Low Noise Amplifier in SiGe HBT Technology with Substrate Parasitic Model

Raghavan, Anand ; Jalan, Umesh ; Chakraborty, Sudipto ; Lee, Chang-Ho ; Laskar, Joy ; Chen, Emery ; Lee, JongSoo ; Cressler, J. D. ; Freeman, Greg ; Joseph, Alvin (2004) A Millimeter-Wave Linear Low Noise Amplifier in SiGe HBT Technology with Substrate Parasitic Model. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

This paper outlines the design and implementation of a monolithic millimeter-wave low noise amplifier (LNA) fabricated in a 200 GHz SiGe HBT technology. A simple analytical model of electromagnetic and substrate parasitic effects inherent at millimeter-wave frequencies is also included. A measured gain of 13.3 dB at 45 GHz, with an associated 3 dB bandwidth of 6.7 GHz, i s exhibited by the LNA, along with a noise figure of 4.5 dB. The LNA provides linear performance with an IIP3 of –8 dBm and it dissipates 18 mW.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Raghavan, Anand
Jalan, Umesh
Chakraborty, Sudipto
Lee, Chang-Ho
Laskar, Joy
Chen, Emery
Lee, JongSoo
Cressler, J. D.
Freeman, Greg
Joseph, Alvin
Settori scientifico-disciplinari
DOI
Data di deposito
15 Giu 2005
Ultima modifica
17 Feb 2016 14:10
URI

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