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Masuda, Satoshi ; Kira, Hidehiko ; Hirose, Tatsuya
(2004)
110-GHz High-gain Flip-chip InP HEMT Amplifier
with Resin Encapsulation on an Organic Substrate.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
A high-gain amplifier monolithic microwave integrated circuit (MMIC) was developed using InP HEMT technology with inverted microstrip lines. The six-stage amplifier demonstrated a gain of 30 dB at 110 GHz. We also fabricated a resin-sealed flip-chip MMIC on a highly isolated cost-effective glass-epoxy substrate, achieving a gain of 28 dB at 110 GHz. To the best of our knowledge, this is the highest gain in the W-band for a flip-chip MMIC sealed with resin.
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