InGaP Power HBTs : Basic power cells for High Power transistors

Floriot, D. ; Chartier, E. ; Caillas, N. ; Delage, S. L. ; Jacquet, JC ; Piotrowicz, S. (2002) InGaP Power HBTs : Basic power cells for High Power transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

Power HBT Technology offers today the best compromise for high power – high efficiency amplifiers up to Ku band. Many improvements have been published in the past to offer a better behaviour in terms of thermal heating and microwave performances. Since the reliability limiting factors have been solved, significant improvements could be proposed to get more power. In this paper, we report on the proposal of new elementary cells used in multi-finger transistors. Based on these, compact very high power amplifiers could be considered.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Floriot, D.
Chartier, E.
Caillas, N.
Delage, S. L.
Jacquet, JC
Piotrowicz, S.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:36
URI

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