Thermal Memory Effects on the Linearity of a GaAs PHEMT

Accillaro, C. ; Cidronali, A. ; Zani, F. ; Loglio, G. ; Usai, M. ; Collodi, G. ; Camprini, M. ; Magrini, I. ; Manes, G. (2004) Thermal Memory Effects on the Linearity of a GaAs PHEMT. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation. The analysis is based on an accurate distributed model modified in order to take into account for the dynamic thermal behaviour under large signal operation. The results show a reduction of the intermodulation product in response to a reduction of the two tones frequency spacing, in agreement with the analytical treatment.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Accillaro, C.
Cidronali, A.
Zani, F.
Loglio, G.
Usai, M.
Collodi, G.
Camprini, M.
Magrini, I.
Manes, G.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:13
URI

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