Low temperature MBE grown GaAs for terahertz radiation applications

Krotkus, A. ; Bertulis, K. ; Adomavicius, R. (2004) Low temperature MBE grown GaAs for terahertz radiation applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

Attempts to optimize recombination characteristics of LTG GaAs layers for their use in terahertz (THz) radiation devices were performed. Femtosecond laser based transient reflectivity and optical pump – THz or mid-IR probe techniques were employed for the electron and, respectively, hole trapping time determination. THz range devices manufactured from LTG GaAs layers grown and annealed at different temperatures were investigated.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Krotkus, A.
Bertulis, K.
Adomavicius, R.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:15
URI

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