SiC and GaN Based Transistor and Circuit Advances

Palmour, J.W. ; Milligan, J.W. ; Henning, J. ; Allen, S.T. ; Ward, A. ; Parikh, P. ; Smith, R.P. ; Saxler, A. ; Moore, M. ; Wu, Y. (2004) SiC and GaN Based Transistor and Circuit Advances. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
Full text disponibile come:
[thumbnail of GA043234.PDF]
Anteprima
Documento PDF
Download (488kB) | Anteprima

Abstract

Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manufactured on 3-inch high purity semiinsulating (HPSI) 4H-SiC substrates. Wide bandwidth circuits using both 10 Watt and 60 watt MESFETs are presented. These MESFETs show no degradation after RFHTOL at a baseplate of 90°C for 4000 hours. High power SiC MMIC amplifiers are shown with excellent yield and repeatability using a released foundry process. GaN HEMTs on HPSI SiC are reported with >30 W/mm RF output power density, and 10 GHz PAE of 72% is also demonstrated for lower voltage devices. Finally, a GaN HEMT operating life of over 500 hours at a TJ =160°C is also reported.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Palmour, J.W.
Milligan, J.W.
Henning, J.
Allen, S.T.
Ward, A.
Parikh, P.
Smith, R.P.
Saxler, A.
Moore, M.
Wu, Y.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:16
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^