Application of UTSi® CMOS On Sapphire to RF and Mixed Signal Requirements in Advanced Space Systems

Reedy, Ronald E. (2002) Application of UTSi® CMOS On Sapphire to RF and Mixed Signal Requirements in Advanced Space Systems. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

Modern satellite systems require integrated circuits capable of meeting demanding radiation, performance, power consumption, price and integration requirements. As satellite systems evolve to large digital payloads and phased array antennae, highly integrated mixed signal and RF ICs are becoming critical to overall system performance. Ultra-Thin-Silicon, or UTSi, CMOS is a modern, high yield version of silicon on sapphire which provides natural radiation hardness with the advantages of high volume commercial CMOS manufacturing. This paper will discuss the variety of products and their performance available for satellite applications from Peregrine Semiconductor, including phase locked loops, mixers, switches, A/D converters, EEPROM, digital logic and integrated passive devices.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Reedy, Ronald E.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:36
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