Abstract

Sequential tunneling behavior of p-n resonant tunneling diode with four-period InP/InGaAs superlattice is demonstrated. Theoretical calculation shows three split quantized energies in the four-period InP (50Å)/InGaAs (25Å) superlattice structure. For the increase of more negative differential resistance (NDR) routes, high-field domain is formed in the superlattice under sufficiently large operation biases. Experimentally, an interesting six-route NDR characteristic, resulting from the form of split miniband structures and the extension of high-field domain in the InP/InGaAs superlattice, is observed at room temperature.