Simulation and measurement of optoelectronic performances of InP/InGaAs heterojunction bipolar phototransistor

Chennafi, Noureddine ; Rumelhard, Christian ; Gonzalez, Carmen ; Thuret, Julien (1997) Simulation and measurement of optoelectronic performances of InP/InGaAs heterojunction bipolar phototransistor. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

Physical modeling of an InP/lnGaAs phototransistor using a two dimensional finite elements program was performed. A good agreements were found with measurements. A large-signal model of the phototransistor has been developed and implemented in MDS.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Chennafi, Noureddine
Rumelhard, Christian
Gonzalez, Carmen
Thuret, Julien
Settori scientifico-disciplinari
Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
DOI
10.6092/unibo/amsacta/1241
Data di deposito
23 Nov 2005
Ultima modifica
17 Feb 2016 14:21
URI
https://amsacta.unibo.it/id/eprint/1241

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