A GaAs monolithic anti-series varactor pair for voltage-controlled capacitance with reduced RF nonlinearity

Han, Qing ; Shimura, Atsushi ; Inagaki, Keizo ; Ohira, Takashi ; Akaike, Masami (2005) A GaAs monolithic anti-series varactor pair for voltage-controlled capacitance with reduced RF nonlinearity. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper presents a trial fabricated GaAs monolithic anti-series varactor pair. Its second-order and third-order harmonic distortions, which are generated from the nonlinearity of capacitance-voltage characteristics, are investigated experimentally and numerically. Compared to the case of a single varactor, the distortions of measurement and simulation are suppressed by about 25 dB and 45 dB for the second-order harmonic, and 3 dB and 10 dB for the third-order harmonic, respectively.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Han, Qing
Shimura, Atsushi
Inagaki, Keizo
Ohira, Takashi
Akaike, Masami
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:21
URI

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