A SPICE model for the gate current of HEMTs

Bertuccio, G. ; Fasoli, L. ; Berroth, M. (1997) A SPICE model for the gate current of HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

A model for simulating the DC characteristics of the gate junction in High Electron Mobility Transistors is presented. The equations for the gate current of FET's in the SPICE simulator are modified to account of the HEMT gate current in a wide range of bias conditions. It is proven that a four-diodes model yields to a satisfactory agreement with the experimental data. The presented model can be employed either by implementing the modified equations in the simulator code or by a device macro modeling.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Bertuccio, G.
Fasoli, L.
Berroth, M.
Settori scientifico-disciplinari
DOI
Data di deposito
01 Dic 2005
Ultima modifica
17 Feb 2016 14:24
URI

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