PHEMT device for microwave power applications based on a double delta doped heterostructure with a stop etch layer

Brinciotti, A. ; Di Maio, G. ; Ravasi, G. ; Bianchi, S. ; Castelli, A. ; Scopelliti, C.L. (1997) PHEMT device for microwave power applications based on a double delta doped heterostructure with a stop etch layer. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

In this work, we have compared the DC and RF performances of two different PHEMT devices both based on a double D doped AlGaAs/InGaAs/AlGaAs Strained Single Quantum Well , with the gate evaporated either on an AlGaAs surface or on a GaAs one. In the last case an AlAs stop etch layer was introduced in the vertical structure. The effects on the stability of the RF performances during the device RF operation when the gate evaporation was performed either on GaAs or on AlGaAs were investigated too.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Brinciotti, A.
Di Maio, G.
Ravasi, G.
Bianchi, S.
Castelli, A.
Scopelliti, C.L.
Settori scientifico-disciplinari
DOI
Data di deposito
01 Dic 2005
Ultima modifica
17 Feb 2016 14:24
URI

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