A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range

Kallfass, Ingmar ; Zeuner, Marco ; Konig, Ulf ; Schumacher, Hermann ; Brazil, Thomas J. (2002) A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

A new, analytic large-signal model for N-channel SiGe Modulation Doped Field Ef-fect Transistors (MODFETs) is presented. The model is based on a non-linear equivalent circuit and can be employed to fit the characteristics in the sub-threshold, linear and saturation operating region from DC to high frequencies. In addition to the non-linear I ds current source, gate/drain-and gate/source capacitance elements, it contains a dispersion model to account for the observed low-frequency dispersion effects in the devices. This contribution focuses on the reliable pre-diction of large-signal characteristics such as gain compression and third order intercept points by ex-tending the covered gate-source and drain-source voltage regimes of the model. Device characterisa-tion has been carried out up to 50GHz and allows for the extension of the model’s valid frequency range well beyond the device’s measured transit frequency of around 40GHz.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Kallfass, Ingmar
Zeuner, Marco
Konig, Ulf
Schumacher, Hermann
Brazil, Thomas J.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:37
URI

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