Development of temperature dependent load-pull analysis techniques

Gebara, Edward ; Heo, Deukhyoun ; Laskar, Joy ; Harris, Mike (1999) Development of temperature dependent load-pull analysis techniques. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
Full text disponibile come:
[thumbnail of GAAS_99_058.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

Cryogenic on-wafer load-pull measurements are performed on GaAs MESFET (Lg=0.6um, W=300um and Lg=1.0nm, W=300um) power devices at 300K, 200K and 15K to demonstrate their performance improvement in output power and power-added efficiency when operated at reduced lattice temperatures. The power measurements were achieved at optimal bias condition to take into account the positive Temperature Coefficient (TC) that the On Breakdown Voltage exhibits. Additionally, an empirical temperature-dependent large-signal model valid to 18GHz is developed using experimental S-parameters and DC measurements to correlate actual load-pull measurements from 300K to 15K and to understand the performance improvements in output power and power-added efficiency. The model is also used to correlate the effect of the TC of Breakdown Voltage to power measurements.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Gebara, Edward
Heo, Deukhyoun
Laskar, Joy
Harris, Mike
Settori scientifico-disciplinari
DOI
Data di deposito
12 Dic 2005
Ultima modifica
17 Feb 2016 14:28
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^