Dual-wavelength of 1.3um and 1.55um AlGaSb/GaSb asymmetric quantum-well laser

Sim, Steven K. H. ; Mutamba, Kabula ; Herbert Li, E. (1999) Dual-wavelength of 1.3um and 1.55um AlGaSb/GaSb asymmetric quantum-well laser. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

A dual-wavelength laser diode of 1.3um and 1.55um operating wavelength is under analysis. The structure of this laser diode involves an asymmetric dual quantum-well of AlGaSb/GaSb . The longer-wavelength quantum-well is doped with a 50A Si at the barrier near the well. This will enable a localized intermixing during an anneal under a SiNx cap, while the shorter-wavelength quantum-well is not affected. The area where GaSb is exposed has no intermixing in both the quantum-wells. It is possible to construct a dual wavelength quantum-well laser where the surface is pattered to have a section covered with SiNx and the other has GaSb exposed. The GaSb -exposed section undertakes surface lasing at 1.55u.m, while the SiNx capped section removes the longer wavelength quantum well by intermixing and lasing at 1.3um.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Sim, Steven K. H.
Mutamba, Kabula
Herbert Li, E.
Settori scientifico-disciplinari
DOI
Data di deposito
12 Dic 2005
Ultima modifica
17 Feb 2016 14:28
URI

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