Overview of non-linear device modelling methods based on vectorial large-signal measurements

Schreurs, Dominique (1999) Overview of non-linear device modelling methods based on vectorial large-signal measurements. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
Full text disponibile come:
[thumbnail of GAAS_99_076.pdf]
Anteprima
Documento PDF
Download (2MB) | Anteprima

Abstract

Classical large-signal device models are indirectly derived from small-signal S-parameter measurements. The recent availability of full two-port vectorial large-signal measurement systems has initiated the development of new techniques to enhance the ease and accuracy of non-linear transistor modelling. In this paper, we focus to two equivalent circuit based, or "grey" box, transistor modelling methods that are based on vectorial large-signal measurements. We show that the technique of parameter optimisation is interesting to generate fast and accurate non­linear models for particular applications. The direct extraction method is preferable to determine general non-linear models, but its efficiency is strongly related to the available measurement hardware.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Schreurs, Dominique
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:29
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^