Dual Transimpedance Amplifier for 43 Gbps applications

van Wanum, M. ; van der Graaf, M.W. ; Hoogland, J.A.H. ; van Heijningen, M. (2002) Dual Transimpedance Amplifier for 43 Gbps applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

A 3-stage dual TransImpedance Amplifier (TIA) on one 2x1.8 mm 2 GaAs chip with 0.2 µm pHEMT technology has been designed for fiberoptic communication applications. It uses cascode connected common source FETs in a Constant-K configuration. The operating frequency ranges from DC to 35 GHz. The TIA is designed for a diode capacitance of 120 fF. The equivalent input referred noise current is around 18 pA/ÖHz for a gain of around 40 dBW or 6.5 dB. The matching at the output is better than 14 dB. Measured RF performance in combination with the small size makes it very suitable for WDM telecommunication systems. A comparison between simulations and measurements is also made.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
van Wanum, M.
van der Graaf, M.W.
Hoogland, J.A.H.
van Heijningen, M.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:38
URI

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