A novel thermal resistance extraction technique for temperature-dependent FET modelling

Schmale, Ingo ; Kompa, Günter (1998) A novel thermal resistance extraction technique for temperature-dependent FET modelling. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

This paper proposes a novel technique for extracting FET thermal resistances. The technique is very simple since it requires only data from conventional DC measurements of the gate current, which makes it suitable for widespread application. It is essentially based on the gate-diode's high sensitivity to channel temperature increase engendered by device self-heating. After deriving and explaining the technique's procedural steps, its results for an 0.5um-gate MESFET are critically discussed.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Schmale, Ingo
Kompa, Günter
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:35
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