Millimeter-Wave and Terahertz Devices Based on MEMS Concepts

Hartnagel, Hans L. (2002) Millimeter-Wave and Terahertz Devices Based on MEMS Concepts. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

The higher the frequency, the more significant are the losses. Therefore it is important even for semiconductors with relatively large energy gap to remove as much semiconducting material as possible. This leads to components and their circuits to be produced on thin semiconducting membranes where most of the substrate is etched away. It is then a relatively small step to employ mechanical motion of suitably structured devices for such properties as fine-tune phase shifting or power switching. Relevant technology details are presented. A number of active and passive components are described with their special operational behaviour.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
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AutoreAffiliazioneORCID
Hartnagel, Hans L.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:38
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