Abstract

We report on the realisation of an original SAGFET technology, presenting d.c. and r.f. measurements on discrete devices as a demonstration of the validity of said technology. Even though at an initial stage, the low-noise, control and power devices, simultaneously fabricated on the same wafer, are comparable with the more mature recessed-gate technology, yielding NF better than 2 dB and Pout better than 500 mW/mm at 12 GHz. As an example of the potentiality of this technology a prototype Tx/Rx chip is also presented.