Electroluminescence study of "on" and "off state breakdown in InP based HEMTs

Sylvestre, A. ; Aniel, F. ; Boucaud, P. ; Julien, F.H. ; Jin, Y. ; Crozat, P. ; de Lustrac, A. ; Adde, R. (1996) Electroluminescence study of "on" and "off state breakdown in InP based HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

We investigate the low-energy (0.7-0.9eV) electroluminescence (EL) at low temperature (30 - 100 K) of short gate lattice-matched InP based HEMTs. This study allows to observe directly impact ionization in the "on" and "off" state Ino.53Gao.47As channel. In the on-state, the evolution of the luminescence as a function of the bias applied to the device shows that the electroluminescence intensity depends on two parameters: the gate-drain electric field and the drain current intensity. The voltage breakdown in the off-state is discussed in term of impact ionization in the InGaAs channel due to hot carriers originating from the gate leakage current.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Sylvestre, A.
Aniel, F.
Boucaud, P.
Julien, F.H.
Jin, Y.
Crozat, P.
de Lustrac, A.
Adde, R.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:38
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