SiGe versus GaAs - is there a challenge?

Abbott, Derek ; Eshraghian, Kamran (1996) SiGe versus GaAs - is there a challenge? In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

There has been considerable recent activity with SiGe technology and much speculation that it will soon dis­place GaAs. Advances in conventional CMOS, over the years, have been based around device scaling. As submi-cron dimensions have been approached, further scaling of CMOS becomes increasingly complex and fundamen­tal limits will soon emerge. The significance of SiGe is that it is compatible with conventional silicon process­ing and offers improved material properties, so that con­tinued advancement can be sustained. We examine the present status of SiGe with respect to GaAs.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Abbott, Derek
Eshraghian, Kamran
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:38
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