Defect-related carrier transport peculiarities in lec-grown semi-insulating and heavily-doped GaAs crystals

Jarasiunas, K. ; Vaitkus, J. ; Bastiene, L. ; Vasiliauskas, R. (1994) Defect-related carrier transport peculiarities in lec-grown semi-insulating and heavily-doped GaAs crystals. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

Nonlinear optical techniques based on light diffraction on transient free carrier and photorefractive gratings are used to study growth-defect governed carrier generation and transport properties. The sensitivity of those nondestrutive techniques for monitoring dislocation/EL2 distribution in SI GaAs and direct determination of carrier mobilities/lifetimes in heavily doped GaAs is demonstrated.

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