Abstract

A new class of optical switching structures has been recently proposed, the barrier resevoir and quantum well electron transfer structures (BRAQWETS), which are based on the voltage-control transfer of electrons in multiple-quantum wells. This type of modulators provides stronger electro-absorption and refraction than structures based on the quantum confined Stark effect, although the optical confinement is smaller due to the necessarily limited number of quantum wells. The purpose of this presentation is to investigate the fabrication and the basic physics of InP-based BRAQWET structures toward optimization of device performances.