CAD-oriented modeling of the optically-controlled GaAs MESFET

Calandra, Enrico F. ; Sirna, Guglielmo (1994) CAD-oriented modeling of the optically-controlled GaAs MESFET. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

A CAD-oriented circuit model for the optically-controlled GaAs MESFET was developed on the basis of a dedicated characterization method. By exploiting separation of direct and indirect photo-induced effects, a simple but accurate modeling of both the static and microwave characteristics of the illuminated transistor was achieved. As demonstrated by the test circuits implemented, good agreement between measured and simulated performances can thus be obtained with limited device parameter identification effort.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Calandra, Enrico F.
Sirna, Guglielmo
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:44
URI

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