GaAs p + -n-n+ diodes made by Zn diffusion out of a spin-on film

Cocorullo, G. ; Hartnagel, H.L. ; Schweeger, G. ; Spirito, P. (1990) GaAs p + -n-n+ diodes made by Zn diffusion out of a spin-on film. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
Full text disponibile come:
[thumbnail of GAAS_90_046.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

Diffusion technology, which is well introduced for silicon, is still problematic for GaAs and other compound semiconductors. Spin-on films containing the dopant and protecting at the same time the surface might bring a solution to the problems. We examined a commercially available spin-on film containing Zn as p-dopant for the production of deep diffused p-n-junctions and of pin diodes. The technological problems - mainly a very slow diffusion but also contamination with other materials - are discussed in detail. The electrical characteristics of the manufactured diodes are presented and the dependence of different parameters on diode size and n"-layer thickness is discussed.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Cocorullo, G.
Hartnagel, H.L.
Schweeger, G.
Spirito, P.
Settori scientifico-disciplinari
DOI
Data di deposito
02 Feb 2006
Ultima modifica
17 Feb 2016 14:49
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^