Monolithic integration of metamorphic pin DIODES and HFETs for heterointegrated MMICs

Ziegler, Volker ; Gässler, Christoph ; Wölk, Claus ; Deufel, Reinhard ; Berlec, Franz-Josef ; Dickmann, Jürgen ; Käb, Norbert ; Schumacher, Hermann (2000) Monolithic integration of metamorphic pin DIODES and HFETs for heterointegrated MMICs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
[thumbnail of GAAS_8_4.pdf]
Anteprima
Documento PDF
Download (363kB) | Anteprima

Abstract

This paper presents for the first time the monolithic integration of In0.53Ga0.47As PIN diodes and In0.53Ga0.47As/In0.52Al0.48As HFETs on one GaAs substrate. To the best of our knowledge, this is the first approach that these metamorphic devices are heterointegrated on a single GaAs wafer. Special attention was paid to the surface roughness of the layers which was monitored with an atomic force microscope during the processing. Taking advantage of this combined technology, metamorphic PIN diodes and HFETs were processed simultaneously and used to realize different mm-wave circuits on this wafer. The HFETs with a gate-length of 0.12 µm demonstrate an extrinsic transconductance of 772mS/mm and cut-off frequencies of fT = 137GHz and fmax = 212GHz. The fabricated SPDT (single-pole double-throw) switch has an insertion loss smaller than 2.5dB and an isolation larger than –21dB from 39GHz to 79GHz and the single-stage amplifier exhibits a gain of 6.5dB at 54GHz.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Ziegler, Volker
Gässler, Christoph
Wölk, Claus
Deufel, Reinhard
Berlec, Franz-Josef
Dickmann, Jürgen
Käb, Norbert
Schumacher, Hermann
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:40
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^