Correlation between Chemical and Electrical Properties of n-InGaP Surfaces Grown by MOVPE

Hashizume, Tamotsu ; Saitoh, Toshiya (2001) Correlation between Chemical and Electrical Properties of n-InGaP Surfaces Grown by MOVPE. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.
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Abstract

Correlation between chemical and electrical properties of n-InGaP surfaces grown by metal-organic chemical vapor epitaxy (MOVPE) was investigated by x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and UHV contactless capacitance-voltage (C-V) methods. An air-exposed surface exhibited highly In-rich phase where the InPO 4 -like natural oxide was dominant. Poor I-V characteristics appeared in Schottky contacts fabricated on the air-exposed surfaces. Chemical treatments in HCl and HF solutions were found to be effective in reducing natural oxide and in recovering the surface stoichiometry. The UHV contactless C-V results showed no pronounced Fermi level pinning at the chemically treated InGaP surfaces. Furthermore, such treatments improved Schottky I-V properties.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Hashizume, Tamotsu
Saitoh, Toshiya
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:32
URI

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