High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications

Betti-Berutto, A. ; Poledrelli, C. ; Benelbar, R. ; Chen, S.T. ; Khandavalli, C. ; Satoh, T. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J. (2000) High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

Recent commercial wireless applications such as Point to Point radio links, LMDS (Local Multipoint istribution Service), LMCS (Local multi-point Communications Service) and Commercial K-Band Satellite based services have spurred significant activity in development of mmWave power amplifiers. These applications lie in the frequency range of 18 to 42GHz with possible future extensions to 60GHz. These systems employ digital modulation schemes for which highly linear mmWave power amplifiers are essential. This paper presents an overview of some chipsets consisting of High Power amplifiers covering the frequency range of 18 to 32GHz. Preferred solutions to a low cost subsystem vary from one subsystem manufacturer to another as it involves assembly and test capabilities in addition to component costs. The overall direction appears to be toward multi-chip moduleassemblies. Here, both chip and packaged level component options are considered.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Betti-Berutto, A.
Poledrelli, C.
Benelbar, R.
Chen, S.T.
Khandavalli, C.
Satoh, T.
Hasegawa, Y.
Kuroda, S.
Fukaya, J.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:45
URI

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