Unconditional stabilization of CS and CG Mesfet Transistor

Hammad, Hany F. ; Freundorfer, Alois P. ; Antar, Yahia M.M. (2001) Unconditional stabilization of CS and CG Mesfet Transistor. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.
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Abstract

Feedback is used to achieve multi-band unconditional stability for GaAs MESFET transistor. Analytical formulation based on evaluating the stability parameters as a function of the transistor model elements is provided, with two methods to accurately estimate the feedback values needed for all-band unconditional stability. The technique is applied to common source and common gate configurations. Both were monolithically fabricated and tested, and very good agreement between the predicted and measured results is obtained.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Hammad, Hany F.
Freundorfer, Alois P.
Antar, Yahia M.M.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:47
URI

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