Study of temperature dependence of turn-on voltages IN III-V HBTS

Sheng, H. ; Rezazadeh, A.A (2003) Study of temperature dependence of turn-on voltages IN III-V HBTS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

We report variation of collector and base currents with temperature from 80K-400K on InGaAs/GaAs and AlGaAs/GaAs HBTs. The results obtained showed clearly that, among all the material systems studied, the InP/ In 0.53 Ga 0.47 As HBTs have the lowest turn-on voltage (0.1V). This is in good agreement with the theoretical prediction. Although marked differences in the values of turn-on, Vturn-on for InGaAs-and GaAs-based HBTs were observed, voltage-thermal feedback coefficients of Vturn-on for all devices, irrespective of their material systems, do not differ considerably.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Sheng, H.
Rezazadeh, A.A
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:52
URI

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