Large-Signal Modeling of SiGe HBTs Including a New Substrate Network Extraction Method W

Basaran, U. ; Berroth, M. (2003) Large-Signal Modeling of SiGe HBTs Including a New Substrate Network Extraction Method W. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

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Abstract

Large-signal modeling results of SiGe HBTs with HICUM (High Current Transistor Model)are presented.Moreover,a new and robust method to determine the substrate network elements of bipolar transistors from S-parameter measurements is proposed in this work.The investigated substrate network is compatible with HICUM and includes the substrate- collector depletion capacitance,substrate resistance and capacitance.

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