Pd/In-based Ohmic Contacts to n-GaAs

Zlámal, Jan ; Myslík, Vladimír ; Machác, Petr (2003) Pd/In-based Ohmic Contacts to n-GaAs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (134kB) | Anteprima

Abstract

The contribution deals with the performance of doping element/Pd/In contact structures on n + -GaAs wafers where Ge,Sn or Si were employed as doping elements.The contact structures were deposited by high vacuum evaporation.Ohmic behaviour of the structures was achieved either by rapid thermal annealing (RTA)or by laser annealing by YAG:Nd power laser.Electrical properties were measured by four-point modified method. In addition the influence of absorbing cap layer was studied.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Poster)

Autori