CMOS and SiGe Bipolar Circuits for High-Speed Applications

Simburger, Werner ; Kehrer, Daniel ; Tiebout, Marc ; Wohlmuth, Hans-Dieter ; Knapp, Herbert ; Wurzer, Martin ; Perndl, Werner ; Rest, Mirjana ; Kienmayer, Christoph ; Thuringer, Ronald ; Bakalski, W. ; Scholtz, Arpad L. (2003) CMOS and SiGe Bipolar Circuits for High-Speed Applications. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

Recently, CMOS has been demonstrated to be a viable technology for very-high-bit-rate broadband and wireless communication systems up to 40 Gb/s and 50 GHz. Advances in device scaling and doping-profile optimization have also resulted n SiGe bipolar transistors with impressive performance, includ-ing cut-off frequencies of more than 200 GHz. This paper presents advances in circuit design which fully exploit the high-speed potential of a 0.13 µm CMOS technology up to 50 GHz and of a high-performance SiGe bipolar technology up to 110 GHz oper-ating frequency. The combination of advanced circuit techniques and a state-of-the-art fabrication-process technology results in continuing the upward shift of the frequency limits.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Simburger, Werner
Kehrer, Daniel
Tiebout, Marc
Wohlmuth, Hans-Dieter
Knapp, Herbert
Wurzer, Martin
Perndl, Werner
Rest, Mirjana
Kienmayer, Christoph
Thuringer, Ronald
Bakalski, W.
Scholtz, Arpad L.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:55
URI

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