A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers

Wong, J. N. H. ; Aitchison, C. S. (2003) A Simple Technique for Improving the IM3/C and PAE Performance of MESFET Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

This paper shows by simulation that a shunt short -circuited O/4 line placed across the drain terminals of a microwave MESFET amplifier significantly improves both the IM3/C and 2-tone PAE performance by a maximum of 14dB and 3%(from 24.5%to 27.5%),respectively.Practical confirmation with both WCDMA and GSM-EDGE input signals is obtained with a microstrip amplifier at 2GHz demonstrating an average improvement in ACPR of 12.5dB and a reduction in EVM from 5.0%to 1.3%respectively. The technique is novel,simple and practical and will be of direct interest to designers of base station amplifiers.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Wong, J. N. H.
Aitchison, C. S.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:56
URI

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